| PART |
Description |
Maker |
| FQD10N20C FQU10N20C FQD10N20CTM FQD10N20CTF FQU10N |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FQPF10N20C FQPF10N20CNL |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 9.5 A, 200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQI10N20C FQB10N20C FQB10N20CTM FQI10N20CTU |
200V N-Channel MOSFET
200V N-Channel Advance QFET C-series
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRFU210B IRFR210B IRFU210BTLTUFP001 IRFU210BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR210 & IRFR210A
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFU210 & IRFU210A
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFS640 IRFS640B IRF640B IRF640 IRF640BTSTUFP001 I |
200V N-Channel B-FET / Substitute of IRF640 & IRF640A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
http://
|
| FQA6N90C |
900V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor
|
| FQI13N50CTU |
500V N-Channel Advance Q-FET C-Series; Package: TO-262(I2PAK); No of Pins: 3; Container: Rail 13 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
| FQU6N50C FQD6N50C FQD6N50CTF FQD6N50CTM |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
500V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FQP2N60C FQPF2N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
